DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP32N055HLE,NP32N055ILE,NP32N055SLE
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
ORDERING INFORMATION
These products are N-channel MOS Field Effect
Transistor designed for high current switching applications.
PART NUMBER
NP32N055HLE
PACKAGE
TO-251 (JEITA) / MP-3
NP32N055ILE
Note
TO-252 (JEITA) / MP-3Z
FEATURES
? Channel temperature 175 degree rating
NP32N055SLE
Note Not for new design.
TO-252 (JEDEC) / MP-3ZK
? Super low on-state resistance
R DS(on)1 = 24 m ? MAX. (V GS = 10 V, I D = 16 A)
R DS(on)2 = 29 m ? MAX. (V GS = 5.0 V, I D = 16 A)
? Low C iss : C iss = 1300 pF TYP.
? Built-in gate protection diode
(TO-251)
ABSOLUTE MAXIMUM RATINGS (T A = 25°C)
Drain to Source Voltage (V GS = 0 V)
Gate to Source Voltage (V DS = 0 V)
Drain Current (DC)
V DSS
V GSS
I D(DC)
55
±20
±32
V
V
A
Drain Current (pulse)
Note1
I D(pulse)
±100
A
Total Power Dissipation (T A = 25°C)
P T
1.2
W
Total Power Dissipation (T C = 25°C)
Channel Temperature
Storage Temperature
P T
T ch
T stg
66
175
? 55 to +175
W
°C
°C
(TO-252)
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I AS
E AS
28 / 21 / 8
7.8 / 44 / 64
A
mJ
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2. Starting T ch = 25°C, R G = 25 ? , V GS = 20 → 0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
R th(ch-C)
2.27
°C/W
Channel to Ambient Thermal Resistance R th(ch-A)
125
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14137EJ5V0DS00 (5th edition)
Date Published July 2005 NS CP(K)
Printed in Japan
The mark
shows major revised points.
1999, 2005
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相关代理商/技术参数
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